Yole Group announces the release of two new complementary analyses: IGBT 2025, a market & technology trends report, and Si IGBT Comparison 2025, providing the industry’s most comprehensive analysis of silicon IGBT devices, markets, designs, and competitive landscapes. Together, Yole Group’s reports deliver insights into the future of IGBTs at a time when SiC and GaN technologies are reshaping power electronics.
Market dynamics
The IGBT market is entering a new phase in which silicon, SiC, and GaN coexist, each addressing specific performance and cost requirements.
While SiC expands rapidly, particularly in 800V EV platforms and high-efficiency industrial systems, IGBTs continue to dominate in high-power, high-voltage, and cost-sensitive applications such as HEVs/PHEVs, PV inverters, wind turbines, UPS, rail traction, and grid infrastructure.
Market momentum is reinforced by rising system voltages across renewable energy and charging applications, the shift away from thyristors in very high-power systems, and strong price pressure that favours mature, scalable IGBT technologies.
Module demand is accelerating faster than discretes, supported by system integration trends, while the discrete segment remains driven by industrial and consumer applications.
At the same time, the market is being transformed by major supply chain movements, including consolidation, new investments, and geopolitical tensions across China, Europe, and the US. These factors directly influence manufacturing capacity, technology shifts, and competitive positioning.
“Even with SiC accelerating, IGBTs will remain foundational in electrification markets where cost, reliability, and high-voltage performance matter most. Their role in the growing segments of HEVs/PHEVs, PV inverters, industrial drives, wind turbines, and rail systems remains firmly established,” said Milan Rosina PhD, Principal Analyst, Power Electronics and Battery at Yole Group.
A strategic investigation into economics, technology, and global supply chains
Yole Group’s new IGBT 2025 analysis evaluates the entire IGBT ecosystem, from wafer supply to devices, discretes, and power modules. The report identifies the factors that will shape future market trajectories, including supply chain consolidation, new investments, and geopolitical dynamics influencing China, Europe, and the United States. It also reviews manufacturing facilities worldwide and details the ongoing evolution of IGBT device architectures at wafer, die, and package levels.
In parallel, the Si IGBT Comparison 2025 delivers an extensive reverse-engineering and cost analysis of six new IGBT devices from leading power semiconductor companies, Bourns, Littelfuse, Panjit, onsemi, Diotec, and Infineon Technologies, ranging from 650 to 1400V. The report integrates optical, SEM, and structural analyses, as well as a full cost breakdown, and compares these devices to 44 state-of-the-art commercial IGBTs across 12+ major players. A particular emphasis is placed on field-stop trench IGBT designs, still the dominant architecture in the 650–1400 V range.
“Our IGBT comparison analysis highlights how differences in trench structures, field-stop layers, and packaging choices directly translate into cost, performance, and competitiveness. With 44 devices benchmarked and a unique methodology, we provide the industry’s widest and deepest look into silicon IGBT innovation,” said Amine Allouche, Senior Technology & Cost Analyst, Power Electronics and Battery at Yole Group.
Silicon carbide may be reshaping premium segments of power electronics, but Yole Group’s latest analyses confirm that IGBTs will continue to anchor the global transition to electrification, especially in high-power, high-voltage, and cost-sensitive applications. The combination of detailed market modelling and deep reverse-engineering provides industry stakeholders with the clarity needed to navigate a rapidly evolving technology landscape.
