Mouser Electronics announces the release of a new eBook in collaboration with onsemi, focusing on the role of silicon carbide (SiC) semiconductors in power system design.
SiC devices are transforming power electronics with their advanced material properties, leading to more efficient, compact, and sustainable power systems. In the eBook titled Enabling a Sustainable Future with Silicon Carbide Power Electronics, onsemi delves into the benefits of SiC, its applications in electric vehicles and renewable energy, and the significance of selecting the right SiC partner. As a trusted supplier of power solutions, onsemi provides high-quality SiC devices, a dependable supply chain, and extensive design support.
The eBook features convenient links to select onsemi power products, such as the NTBG014N120M3P EliteSiC MOSFET. This 1200V M3P planar SiC MOSFET is optimised for power applications, with planar technology ensuring reliable operation with negative gate voltage drives and reducing gate turn-off spikes. It is ideally suited for use in solar inverters, electric vehicle charging stations, energy storage systems, and switch-mode power supplies.
Another highlighted product, the NVBG1000N170M1 EliteSiC MOSFET, available from Mouser, is a 1700V M1 planar device designed for fast switching applications. It is AEC−Q101 qualified and PPAP capable, making it an excellent choice for electric vehicles (EVs) and hybrid electric vehicles (HEVs). In these applications, SiC devices offer advantages such as smaller, lighter, and more efficient power solutions, reducing energy waste and lowering the number of costly batteries required.
The NCP51705 gate driver is designed specifically to drive SiC MOSFET transistors, delivering the maximum allowable gate voltage to minimise conduction losses. By providing high peak current during turn-on and turn-off, it reduces switching losses.
Additionally, the NCP51560 isolated dual-channel gate driver is engineered for fast switching and is ideal for driving power SiC MOSFET switches. It features two independent galvanically isolated gate driver channels, which can be configured for two low-side, two high-side switches, or a half-bridge driver with programmable dead time. The NCP51560 also includes critical protection functions, such as independent under-voltage lockout for both gate drivers.
To explore the new eBook from Mouser and onsemi, visit this link.
