Infineon brings 300mm GaN volume production to Europe
Infineon Technologies is establishing the world’s first high-volume manufacturing facility for next-generation gallium nitride (GaN) power semiconductors on 300mm wafers in Europe. As part of the project, Infineon will invest around €1.1 billion in its existing cleanroom facilities at the Villach site by 2034. Leveraging both the existing and upgraded infrastructure will enable highly efficient

