Cambridge GaN Devices (CGD) joins forces with NXP Semiconductors to accelerate time to market in data centre and automotive markets.
These high-growth markets represent a huge opportunity for GaN. The International Energy Agency expects the energy used by data centres to double by 2030, making energy efficiency improvements a key imperative. It is forecasted that the data centre power semiconductor market will see a CAGR of 11.0% reaching global sales of $4.29 billion by 2032 ,while ResearchandMarkets.com have forecasted that the electric vehicle (EV) traction inverter market will see a CAGR of 16.1%, reach global sales of $67.6 billion in 2034.
This new long-term collaboration will enable NXP to develop GaN-based system solutions, leveraging CGD’s advanced GaN products, early access to next-generation CGD GaN developments, and the team’s expertise in GaN processes and technologies. At the same time, CGD will benefit from access to NXP’s broad processor and analog product portfolios, system know-how and global commercial reach, accelerating market penetration through optimised system-level solutions.
Fabio Necco, CEO, CGD said: “By working closely with NXP, we are accelerating the shift towards a new class of GaN-based power electronics. This collaboration is about leveraging GaN performance to increase efficiency, power density and reliability into real-world data centre and automotive systems, where performance, cost and sustainability now must go hand-in-hand.”
Chris Bretz, Vice President, Advanced Power Systems, NXP said: “CGD combines advanced GaN innovation with practical, scalable power solutions, delivering superior robustness, reliability, and system-level performance. With deep device expertise and strong know-how, CGD is an ideal long-term collaborator for NXP to accelerate high-efficiency GaN adoption across high-growth markets.”
GaN semiconductors enable switching at higher frequencies and achieve greater efficiency compared to competing technologies.
The rapidly increasing power demands in data centres is particularly driven by the growing use of AI. A single rack might have only consumed 40kW in 2022 yet today can draw 200kW or more and it is expected that a single rack will require 1MW or more by 2030. The increased compute density and modern power architectures place stringent requirements on power density and the need to deliver high step-down ratios while maintaining power efficiency. ICeGaN is uniquely positioned to address these requirements enabling higher switching frequency operations, higher power density and delivering superior reliability compared to discrete GaN solutions.
In automotive traction inverters, GaN can improve efficiency at low load. CGD’s ICeGaN technology is the only single chip GaN-based technology running on a standard driver that enables paralleling of multiple devices to meet the high current requirements demanded by traction inverters.
The complementary IP and set of skills of the two companies will enable uniquely differentiated system level solutions for customers exploring the benefits of GaN devices in these two important markets.
